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ISCN366P - Silicon NPN Power Transistor

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Datasheet Details

Part number ISCN366P
Manufacturer INCHANGE
File Size 251.61 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet ISCN366P-INCHANGE.pdf

ISCN366P Product details

Description

DC Current Gain- : hFE= 20-60@IC = 0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current

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