ISCN366P Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
DC Current Gain- : hFE= 20-60@IC = 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min). Minimum Lot-to-Lot variations for.

📥 Download Datasheet

ISCN366P Datasheet Preview — Preview of ISCN366P PDF

Datasheet Specifications

Part number: ISCN366P
Manufacturer: INCHANGE
File Size: 251.61 KB
Datasheet: ISCN366P-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous

ISCN366P Distributors

📁 Related Datasheet

ISCNH060D ISCNH370W ISCNH371D ISCNH372B ISCNH373F ISCNH374D

📌 All Tags

ISCN366P Silicon NPN Power Transistor INCHANGE

INCHANGE ISCN366P-like datasheet