ISCNH376L - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	ISCNH376L
Manufacturer	Inchange Semiconductor
File Size	283.65 KB
Description	N-Channel MOSFET Transistor
Datasheet	ISCNH376L-InchangeSemiconductor.pdf

ISCNH376L Product details

Description

motor drive, DC-DC converter, power switch and solenoid drive.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 72 A IDM Drain Current-Single Pluse 216 A PD Total Dissipation @TC=25℃ 500 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junc

Features

Drain Current : ID= 72A@ TC=25℃.
Drain Source Voltage : VDSS= 500V(Min).
Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jul 10, 2022 |