ISL9N302AS3ST Datasheet | Specifications & PDF Download

ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a

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ISL9N302AS3ST-VB ISL9N302AS3ST-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0023 at VGS = 10 V

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