IX4351NE (IXYS)
9A Low Side SiC MOSFET/IGBT
INTEGRATED CIRCUITS DIVISION
Features
• Separate 9A peak source and sink outputs • Operating Voltage Range: -10V to +25V • Internal charge pump regula
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IX4351NE 9A Low Side SiC MOSFET/IGBT
INTEGRATED CIRCUITS DIVISION Features • Separate.