High Voltage, High Gain BIMOSFETTM Monolithic Bipo.
IXYS
IXBF12N300 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.
