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IXBF12N300 - Monolithic Bipolar MOS Transistor

IXBF12N300 Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.

IXBF12N300 Applications

* z Switch-Mode and Resonant-Mode Power Supplies z Capacitor Discharge Circuits z Uninterrupted Power Supplies(UPS) z Laser Drivers z AC Switches © 2012 IXYS CORPORATION, All Rights Reserved DS100121B(06/12) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min.

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Datasheet Details

Part number
IXBF12N300
Manufacturer
IXYS
File Size
195.94 KB
Datasheet
IXBF12N300-IXYS.pdf
Description
Monolithic Bipolar MOS Transistor

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Monolithic Bipolar MOS Transistor IXYS
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