* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Pow
IXBF12N300 Datasheet (195.94 KB)
IXBF12N300
IXYS
195.94 KB
Monolithic bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.
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