Datasheet4U Logo Datasheet4U.com

IXBF12N300

Monolithic Bipolar MOS Transistor

IXBF12N300 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Pow

IXBF12N300 Datasheet (195.94 KB)

Preview of IXBF12N300 PDF

Datasheet Details

Part number:

IXBF12N300

Manufacturer:

IXYS

File Size:

195.94 KB

Description:

Monolithic bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.

📁 Related Datasheet

IXBF14N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.

IXBF20N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditio.

IXBF20N360 - Bipolar MOS Transistor (IXYS)
Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = IC110 = VCE(sat)  .

IXBF22N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.

IXBF28N300 - Bipolar MOS Transistor (IXYS)
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat)  3000V 28A 2.

IXBF32N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings .

IXBF40N160 - High Voltage BIMOSFET (IXYS)
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf .

IXBF55N300 - Monolithic Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolated Ta.

TAGS

IXBF12N300 Monolithic Bipolar MOS Transistor IXYS

Image Gallery

IXBF12N300 Datasheet Preview Page 2 IXBF12N300 Datasheet Preview Page 3

IXBF12N300 Distributor