Datasheet Specifications
- Part number
- IXBF12N300
- Manufacturer
- IXYS
- File Size
- 195.94 KB
- Datasheet
- IXBF12N300-IXYS.pdf
- Description
- Monolithic Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2.
Applications
* z Switch-Mode and Resonant-Mode Power Supplies z Capacitor Discharge Circuits z Uninterrupted Power Supplies(UPS) z Laser Drivers z AC Switches © 2012 IXYS CORPORATION, All Rights Reserved DS100121B(06/12) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min.IXBF12N300 Distributors
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