IXBF20N300 Datasheet - IXYS

IXBF20N300 Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 130 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 150 W TJ.

IXBF20N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

IXBF20N300 Datasheet (1.53 MB)

IXBF20N300 Datasheet Preview — Preview of IXBF20N300 PDF

Datasheet Details

Part number:

IXBF20N300

Manufacturer:

IXYS

File Size:

1.53 MB

Description:

Bipolar mos transistor.

📁 Related Datasheet

IXBF20N360 Bipolar MOS Transistor (IXYS)

IXBF22N300 Bipolar MOS Transistor (IXYS)

IXBF28N300 Bipolar MOS Transistor (IXYS)

IXBF12N300 Monolithic Bipolar MOS Transistor (IXYS)

IXBF14N300 Bipolar MOS Transistor (IXYS)

IXBF32N300 Bipolar MOS Transistor (IXYS)

IXBF40N160 High Voltage BIMOSFET (IXYS)

IXBF55N300 Monolithic Bipolar MOS Transistor (IXYS)

TAGS

IXBF20N300 Bipolar MOS Transistor IXYS

IXBF20N300 Distributor