* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
IXBF20N300 Datasheet (1.53 MB)
IXBF20N300
IXYS
1.53 MB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBF20N300
(Electrically Isolated Tab)
Symbol Test Conditio.
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