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IXBF20N300 - Bipolar MOS Transistor

IXBF20N300 Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditio.

IXBF20N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

IXBF20N300 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100125C(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Char

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Datasheet Details

Part number
IXBF20N300
Manufacturer
IXYS
File Size
1.53 MB
Datasheet
IXBF20N300-IXYS.pdf
Description
Bipolar MOS Transistor

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Bipolar MOS Transistor IXYS
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