High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 130 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 150 W TJ
Datasheet Details
Part number:
IXBF20N300
Manufacturer:
IXYS
File Size:
1.53 MB
Description:
Bipolar mos transistor.