High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 165 A SSOA VGE = 15V, TVJ = 125°C, RG = 15 ICM = 180 A (RBSOA) Clamped Inductive Load V 1500 V CES TSC VGE = 15V, TJ = 125°C, (SCSOA)
Datasheet Details
Part number:
IXBF22N300
Manufacturer:
IXYS
File Size:
1.51 MB
Description:
Bipolar mos transistor.