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IXBF22N300

Bipolar MOS Transistor

IXBF22N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

IXBF22N300 Datasheet (1.51 MB)

Preview of IXBF22N300 PDF

Datasheet Details

Part number:

IXBF22N300

Manufacturer:

IXYS

File Size:

1.51 MB

Description:

Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.

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IXBF22N300 Bipolar MOS Transistor IXYS

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