IXBF22N300 Datasheet - IXYS

IXBF22N300 - Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 165 A SSOA VGE = 15V, TVJ = 125°C, RG = 15 ICM = 180 A (RBSOA) Clamped Inductive Load V  1500 V CES TSC VGE = 15V, TJ = 125°C, (SCSOA)

IXBF22N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

IXBF22N300-IXYS.pdf