* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
IXBF22N300 Datasheet (1.51 MB)
IXBF22N300
IXYS
1.51 MB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.
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