IXBF9N160 Datasheet - IXYS Corporation

IXBF9N160, High Voltage BIMOSFET

Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160.

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IXBF9N160_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBF9N160

Manufacturer:

IXYS Corporation

File Size:

91.01 KB

Description:

High Voltage BIMOSFET

Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability
* ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - e

Applications

* switched mode power supplies
* DC-DC converters
* resonant converters
* lamp ballasts
* laser generators, x ray generators VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf C ies QGon VF RthJC IC = 5 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.5 mA; VGE = V

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IXBF9N160 High Voltage BIMOSFET IXYS Corporation

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