IXBH15N160 Datasheet - IXYS Corporation

IXBH15N160 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ. 40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ra.

IXBH15N160 Features

* International standard package JEDEC TO-247 AD

* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)

* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics

* MO

IXBH15N160 Datasheet (97.14 KB)