www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 15 A 5.8 V typ.
40 ns G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum Ra
IXBH15N160 Features
* International standard package JEDEC TO-247 AD
* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
* MO
IXBH15N140_IXYSCorporation.pdf
Datasheet Details
IXBH15N160, IXBH15N140
IXYS Corporation
97.14 KB
High voltage bimosfet monolithic bipolar mos transistor.
This datasheet PDF includes multiple part numbers: IXBH15N160, IXBH15N140.
Please refer to the document for exact specifications by model.
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