IXBH15N160, IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

IXYS Corporation

Description

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE.

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IXBH15N160 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBH15N160, IXBH15N140. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBH15N160, IXBH15N140
Manufacturer: IXYS Corporation
File Size: 97.14 KB
Datasheet: IXBH15N140_IXYSCorporation.pdf
Description: High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBH15N160, IXBH15N140.
Please refer to the document for exact specifications by model.

Features

* International standard package JEDEC TO-247 AD
* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
* MO

Applications

* Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
* CRT deflection
* Lamp ballasts 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/10 Nm/lb. in. 6 g Symbol Condi

IXBH15N160 Distributors

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IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXYS Corporation

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