Datasheet Specifications
- Part number
- IXBH42N170
- Manufacturer
- IXYS Corporation
- File Size
- 177.41 KB
- Datasheet
- IXBH42N170_IXYSCorporation.pdf
- Description
- Monolithic Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG.
Applications
* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98710C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 42A, VCE =IXBH42N170 Distributors
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