Datasheet Details
- Part number
- IXBH42N170
- Manufacturer
- IXYS Corporation
- File Size
- 177.41 KB
- Datasheet
- IXBH42N170_IXYSCorporation.pdf
- Description
- Monolithic Bipolar MOS Transistor
IXBH42N170 Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG.
IXBH42N170 Applications
* z Switched-mode and resonant-mode power supplies
z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS98710C(10/08)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfS IC = 42A, VCE =
📁 Related Datasheet
📌 All Tags
IXBH42N170 Stock/Price