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IXBH42N170 Datasheet - IXYS Corporation

IXBH42N170, Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG.
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IXBH42N170_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBH42N170

Manufacturer:

IXYS Corporation

File Size:

177.41 KB

Description:

Monolithic Bipolar MOS Transistor

Applications

* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98710C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 42A, VCE =

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