IXBH42N170 Datasheet - IXYS Corporation

IXBH42N170 Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped inductive load TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 secon.

IXBH42N170 Features

* z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC sw

IXBH42N170_IXYSCorporation.pdf