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IXBH42N170

Monolithic Bipolar MOS Transistor

IXBH42N170 Features

* z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC sw

IXBH42N170 Datasheet (177.41 KB)

Preview of IXBH42N170 PDF

Datasheet Details

Part number:

IXBH42N170

Manufacturer:

IXYS Corporation

File Size:

177.41 KB

Description:

Monolithic bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG.

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IXBH42N170 Monolithic Bipolar MOS Transistor IXYS Corporation

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