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IXBH14N300HV, IXBA14N300HV - Bipolar MOS Transistor

IXBH14N300HV Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7.

IXBH14N300HV Features

* High Voltage Packages
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBH14N300HV Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100613C(6/21) IXBA14N300HV Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J Character

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXBH14N300HV, IXBA14N300HV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXBH14N300HV, IXBA14N300HV
Manufacturer
IXYS
File Size
3.45 MB
Datasheet
IXBA14N300HV-IXYS.pdf
Description
Bipolar MOS Transistor
Note
This datasheet PDF includes multiple part numbers: IXBH14N300HV, IXBA14N300HV.
Please refer to the document for exact specifications by model.

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Bipolar MOS Transistor IXYS
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