Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat) 3000V 14A 2.7.
Features
* High Voltage Packages
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses
Advantages
* Low Gate Drive Requirement
Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches
© 2021 Littelfuse, Inc. DS100613C(6/21)
IXBA14N300HV
Symbol Test Conditions (T = 25°C Unless Otherwise Specified)
J
Character