High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat) 3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM =
Datasheet Details
Part number:
IXBH14N300HV, IXBA14N300HV
Manufacturer:
IXYS
File Size:
3.45 MB
Description:
Bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH14N300HV, IXBA14N300HV.
Please refer to the document for exact specifications by model.