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IXBH14N300HV

Bipolar MOS Transistor

IXBH14N300HV Features

* High Voltage Packages

* High Blocking Voltage

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Ge

IXBH14N300HV Datasheet (3.45 MB)

Preview of IXBH14N300HV PDF

Datasheet Details

Part number:

IXBH14N300HV

Manufacturer:

IXYS

File Size:

3.45 MB

Description:

Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7.

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IXBH14N300HV Bipolar MOS Transistor IXYS

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