IXBH9N140G Datasheet (IXYS Corporation)

IXBH9N140G, Bipolar MOS Transistor

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 9A 4.9 V typ.

70 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Preliminary Data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Cont

IXBH9N140G Features

* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)

* MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage

* Monolithic construction - high blocking voltage capability - very fast