Datasheet Details
- Part number
- IXBH9N140G
- Manufacturer
- IXYS Corporation
- File Size
- 63.27 KB
- Datasheet
- IXBH9N140G_IXYSCorporation.pdf
- Description
- Bipolar MOS Transistor
IXBH9N140G Description
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) t.
IXBH9N140G Features
* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage
* Monolithic construction - high blocking voltage capability - very fast
IXBH9N140G Applications
* Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
* CRT deflection
* Lamp ballasts
1.15/10 Nm/lb. in. 6 g
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise s
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