IXBH9N140G Datasheet - IXYS Corporation

IXBH9N140G, Bipolar MOS Transistor

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET compatible IXBH 9N140G IXBH 9N160G VCES IC25 VCE(sat) t.

IXBH9N140G_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBH9N140G

Manufacturer:

IXYS Corporation

File Size:

63.27 KB

Description:

Bipolar MOS Transistor

Features

* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* MOS Gate turn-on - drive simplicity - MOSFET compatible for 10V turn on gate voltage
* Monolithic construction - high blocking voltage capability - very fast

Applications

* Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
* CRT deflection
* Lamp ballasts 1.15/10 Nm/lb. in. 6 g Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise s

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IXBH9N140G Bipolar MOS Transistor IXYS Corporation

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