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IXBH32N300 - Bipolar MOS Transistor

IXBH32N300 Description

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat.

IXBH32N300 Applications

* z Switched-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generators z Capacitor Discharge Circuits z AC Switches © 2009 IXYS CORPORATION, All Rights Reserved DS100118(02/09) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Value

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Datasheet Details

Part number
IXBH32N300
Manufacturer
IXYS
File Size
180.79 KB
Datasheet
IXBH32N300-IXYS.pdf
Description
Bipolar MOS Transistor

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