Datasheet Specifications
- Part number
- IXBH32N300
- Manufacturer
- IXYS
- File Size
- 180.79 KB
- Datasheet
- IXBH32N300-IXYS.pdf
- Description
- Bipolar MOS Transistor
Description
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = IC110 = VCE(sat.
Applications
* z Switched-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z Laser Generators z Capacitor Discharge Circuits z AC Switches © 2009 IXYS CORPORATION, All Rights Reserved DS100118(02/09) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic ValueIXBH32N300 Distributors
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