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IXBH16N170 - BIMOSFET Monolithic Bipolar MOS Transistor

IXBH16N170 Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCG.

IXBH16N170 Applications

* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98657B(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 16A, VCE =

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Datasheet Details

Part number
IXBH16N170
Manufacturer
IXYS
File Size
170.68 KB
Datasheet
IXBH16N170-IXYS.pdf
Description
BIMOSFET Monolithic Bipolar MOS Transistor

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BIMOSFET Monolithic Bipolar MOS Transistor IXYS
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