Datasheet Specifications
- Part number
- IXBH16N170
- Manufacturer
- IXYS
- File Size
- 170.68 KB
- Datasheet
- IXBH16N170-IXYS.pdf
- Description
- BIMOSFET Monolithic Bipolar MOS Transistor
Description
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCG.
Applications
* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98657B(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 16A, VCE =IXBH16N170 Distributors
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