IXBH20N300 Datasheet (IXYS) - Bipolar MOS Transistor

IXBH20N300, Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat)  3000V 20A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T L T SOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10 secon

IXBH20N300 Features

* High Blocking Voltage

* Anti-Parallel Diode

* International Standard Packages

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)