IXBH20N300 Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat)  3000V 20A 3.

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Datasheet Specifications

Part number: IXBH20N300
Manufacturer: IXYS
File Size: 771.98 KB
Datasheet: IXBH20N300-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* High Blocking Voltage
* Anti-Parallel Diode
* International Standard Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100124B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

IXBH20N300 Distributors

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IXBH20N300 Bipolar MOS Transistor IXYS

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