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IXBH20N300 - Bipolar MOS Transistor

IXBH20N300 Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat)  3000V 20A 3.

IXBH20N300 Features

* High Blocking Voltage
* Anti-Parallel Diode
* International Standard Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBH20N300 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100124B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

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Datasheet Details

Part number
IXBH20N300
Manufacturer
IXYS
File Size
771.98 KB
Datasheet
IXBH20N300-IXYS.pdf
Description
Bipolar MOS Transistor

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