* High Blocking Voltage
* Anti-Parallel Diode
* International Standard Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
IXBH20N300 Datasheet (771.98 KB)
IXBH20N300
IXYS
771.98 KB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBH20N300 IXBT20N300
VCES = IC110 = VCE(sat)
3000V 20A 3.
📁 Related Datasheet
IXBH20N360HV Monolithic Bipolar MOS Transistor (IXYS)
IXBH22N300HV Bipolar MOS Transistor (IXYS)
IXBH2N250 Monolithic Bipolar MOS Transistor (IXYS)
IXBH10N170 Bipolar MOS Transistor (IXYS Corporation)
IXBH12N300 Bipolar MOS Transistor (IXYS)
IXBH14N300HV Bipolar MOS Transistor (IXYS)
IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH15N160 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH16N170 BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)
IXBH16N170A Bipolar MOS Transistor (IXYS Corporation)
