Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33
IXBH16N170A_IXYSCorporation.pdf
Datasheet Details
Part number:
IXBH16N170A
Manufacturer:
IXYS Corporation
File Size:
51.85 KB
Description:
Bipolar mos transistor.