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IXBH16N170A

Bipolar MOS Transistor

IXBH16N170A Features

* Monolithic fast reverse diode

* High Blocking Voltage

* JEDEC TO-268 surface mount and JEDEC TO-247 AD packages

* Low switching losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Molding epoxies meet UL 94 V-0 f

IXBH16N170A Datasheet (51.85 KB)

Preview of IXBH16N170A PDF

Datasheet Details

Part number:

IXBH16N170A

Manufacturer:

IXYS Corporation

File Size:

51.85 KB

Description:

Bipolar mos transistor.
Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) t.

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IXBH16N170A Bipolar MOS Transistor IXYS Corporation

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