IXBH16N170A Datasheet - IXYS Corporation

IXBH16N170A, Bipolar MOS Transistor

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) t.

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IXBH16N170A_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBH16N170A

Manufacturer:

IXYS Corporation

File Size:

51.85 KB

Description:

Bipolar MOS Transistor

Features

* Monolithic fast reverse diode
* High Blocking Voltage
* JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
* Low switching losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Molding epoxies meet UL 94 V-0 f

Applications

* AC motor speed control
* Uninterruptible power supplies (UPS)
* Switched-mode and resonant-mode power supplies
* Capacitor discharge circuits Advantages
* Lower conduction losses than MOSFETs High power density Suitable for surf

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IXBH16N170A Bipolar MOS Transistor IXYS Corporation

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