IXBH16N170A Bipolar MOS Transistor

IXYS Corporation

Description

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) t.

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Datasheet Specifications

Part number: IXBH16N170A
Manufacturer: IXYS Corporation
File Size: 51.85 KB
Datasheet: IXBH16N170A_IXYSCorporation.pdf
Description: Bipolar MOS Transistor

Features

* Monolithic fast reverse diode
* High Blocking Voltage
* JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
* Low switching losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Molding epoxies meet UL 94 V-0 f

Applications

* AC motor speed control
* Uninterruptible power supplies (UPS)
* Switched-mode and resonant-mode power supplies
* Capacitor discharge circuits Advantages
* Lower conduction losses than MOSFETs High power density Suitable for surf

IXBH16N170A Distributors

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IXBH16N170A Bipolar MOS Transistor IXYS Corporation

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