IXBH15N140 Datasheet - IXYS Corporation

IXBH15N140, High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE.

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IXBH15N140_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBH15N140

Manufacturer:

IXYS Corporation

File Size:

97.14 KB

Description:

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

Features

* International standard package JEDEC TO-247 AD
* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
* MO

Applications

* Flyback converters DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
* CRT deflection
* Lamp ballasts 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 1.15/10 Nm/lb. in. 6 g Symbol Condi

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IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXYS Corporation

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