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IXBH20N360HV Datasheet - IXYS

IXBH20N360HV Monolithic Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat)  3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load VGE = 15V.

IXBH20N360HV Features

* High Voltage Packages

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

IXBH20N360HV Datasheet (287.68 KB)

IXBH20N360HV Datasheet Preview — Preview of IXBH20N360HV PDF

Datasheet Details

Part number:

IXBH20N360HV

Manufacturer:

IXYS

File Size:

287.68 KB

Description:

Monolithic bipolar mos transistor.

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