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IXBH20N360HV, IXBT20N360HV - Monolithic Bipolar MOS Transistor

IXBH20N360HV Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat.

IXBH20N360HV Features

* High Voltage Packages
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

IXBH20N360HV Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100643(12/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXBH20N360HV, IXBT20N360HV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXBH20N360HV, IXBT20N360HV
Manufacturer
IXYS
File Size
287.68 KB
Datasheet
IXBT20N360HV-IXYS.pdf
Description
Monolithic Bipolar MOS Transistor
Note
This datasheet PDF includes multiple part numbers: IXBH20N360HV, IXBT20N360HV.
Please refer to the document for exact specifications by model.

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Monolithic Bipolar MOS Transistor IXYS
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