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IXBH20N360HV

Monolithic Bipolar MOS Transistor

IXBH20N360HV Features

* High Voltage Packages

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

IXBH20N360HV Datasheet (287.68 KB)

Preview of IXBH20N360HV PDF

Datasheet Details

Part number:

IXBH20N360HV

Manufacturer:

IXYS

File Size:

287.68 KB

Description:

Monolithic bipolar mos transistor.
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat.

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IXBH20N360HV Monolithic Bipolar MOS Transistor IXYS

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