Datasheet Details
Part number:
IXBH20N360HV, IXBT20N360HV
Manufacturer:
IXYS
File Size:
287.68 KB
Description:
Monolithic bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH20N360HV, IXBT20N360HV.
Please refer to the document for exact specifications by model.
IXBH20N360HV, IXBT20N360HV, Monolithic Bipolar MOS Transistor
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat) 3600V 20A 3.4V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3600 3600 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10 Clamped Inductive Load VGE = 15V
IXBH20N360HV Features
* High Voltage Packages
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
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