Datasheet Details
Part number:
IXBH22N300HV, IXBT22N300HV
Manufacturer:
IXYS
File Size:
258.69 KB
Description:
Bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH22N300HV, IXBT22N300HV.
Please refer to the document for exact specifications by model.
IXBH22N300HV, IXBT22N300HV, Bipolar MOS Transistor
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT22N300HV IXBH22N300HV VCES = IC110 = VCE(sat) 3000V 22A 2.7V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load VGE = 15V
IXBH22N300HV Features
* High Voltage Packages
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
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