IXBH22N300HV Datasheet - IXYS

IXBH22N300HV Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT22N300HV IXBH22N300HV VCES = IC110 = VCE(sat)  3000V 22A 2.7V Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inductive Load VGE = 15V.

IXBH22N300HV Features

* High Voltage Packages

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

IXBH22N300HV Datasheet (258.69 KB)

IXBH22N300HV Datasheet Preview — Preview of IXBH22N300HV PDF

Datasheet Details

Part number:

IXBH22N300HV

Manufacturer:

IXYS

File Size:

258.69 KB

Description:

Bipolar mos transistor.

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IXBH22N300HV Bipolar MOS Transistor IXYS

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