IXBH40N140 Datasheet - IXYS Corporation

IXBH40N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat) tfi TO-247 AD = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns C G G C E E G = Gate, E = Emitter, C = Collector, TAB = Collector C (TAB) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, TC = 90°C TC = 25°C, 1 ms Maximum R.

IXBH40N140 Features

* International standard package JEDEC TO-247 AD

* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)

* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics

* MO

IXBH40N140_IXYSCorporation.pdf