IXBH40N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

IXYS Corporation

Description

www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat.

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Datasheet Specifications

Part number: IXBH40N140
Manufacturer: IXYS Corporation
File Size: 89.90 KB
Datasheet: IXBH40N140_IXYSCorporation.pdf
Description: High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

Features

* International standard package JEDEC TO-247 AD
* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
* MO

Applications

* AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
* CRT deflection
* Lamp ballasts Advantages VGE = 15 V, TVJ = 125°C, RG = 22 W VCE = 0.8

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IXBH40N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXYS Corporation

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