IXBH42N250 Datasheet - IXYS

IXBH42N250 Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N250 VCES = IC110 = VCE(sat)  2500V 42A 3.0V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load VGE = 15V, TJ = 125°C, RG = 82, VCE = 1250V, Non-Repetitive TC .

IXBH42N250 Features

* High Blocking Voltage

* International Standard Package

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

IXBH42N250-IXYS.pdf

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Datasheet Details

Part number:

IXBH42N250

Manufacturer:

IXYS

File Size:

261.65 KB

Description:

Bipolar mos transistor.

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IXBH42N250 IXBH42N250 Bipolar MOS Transistor IXYS

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