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IXBH42N250 - Bipolar MOS Transistor

IXBH42N250 Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N250 VCES = IC110 = VCE(sat)  2500V 42A .

IXBH42N250 Features

* High Blocking Voltage
* International Standard Package
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBH42N250 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2015 IXYS CORPORATION, All Rights Reserved DS100587(01/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

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Datasheet Details

Part number
IXBH42N250
Manufacturer
IXYS
File Size
261.65 KB
Datasheet
IXBH42N250-IXYS.pdf
Description
Bipolar MOS Transistor

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