IXBH42N250 Bipolar MOS Transistor

IXYS

Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N250 VCES = IC110 = VCE(sat)  2500V 42A .

📥 Download Datasheet

IXBH42N250 Datasheet Preview — Preview of IXBH42N250 PDF

Datasheet Specifications

Part number: IXBH42N250
Manufacturer: IXYS
File Size: 261.65 KB
Datasheet: IXBH42N250-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* High Blocking Voltage
* International Standard Package
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2015 IXYS CORPORATION, All Rights Reserved DS100587(01/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

IXBH42N250 Distributors

📁 Related Datasheet

IXBH42N170 IXBH42N170A IXBH40N140 IXBH10N170 IXBH15N140 IXBH15N160

📌 All Tags

IXBH42N250 Bipolar MOS Transistor IXYS

IXYS IXBH42N250-like datasheet