* High Blocking Voltage
* International Standard Package
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
IXBH42N250 Datasheet (261.65 KB)
IXBH42N250
IXYS
261.65 KB
Bipolar mos transistor.
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N250 VCES = IC110 = VCE(sat) 2500V 42A .
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