IXBH40N160 Datasheet - IXYS

IXBH40N160 Monolithic Bipolar MOS Transistor

IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ. tfi = 40 ns C TO-247 AD G E G C E C (TAB) G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient Maximum Ratings 1600 1600 V V ±20 V ±30.

IXBH40N160 Features

* International standard package JEDEC TO-247 AD

* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)

* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics

* MO

IXBH40N160-IXYS.pdf