IXBH40N160 Monolithic Bipolar MOS Transistor

IXYS

Description

IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IC25 = 33 A VCES = 1600 V VCE(sat) = 6.2 V typ.tf.

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Datasheet Specifications

Part number: IXBH40N160
Manufacturer: IXYS
File Size: 129.25 KB
Datasheet: IXBH40N160-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* International standard package JEDEC TO-247 AD
* High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on)
* Monolithic construction - high blocking voltage capability - very fast turn-off characteristics
* MO

Applications

* AC motor speed control
* DC servo and robot drives
* DC choppers
* Uninterruptible power supplies (UPS)
* Switched-mode and resonant-mode power supplies
* CRT deflection
* Lamp ballasts Advantages
* Easy to mount with 1 screw (isolate

IXBH40N160 Distributors

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IXBH40N160 Monolithic Bipolar MOS Transistor IXYS

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