IXBH42N170A Datasheet - IXYS Corporation

IXBH42N170A Monolithic Bipolar MOS Transistor

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.0V 20ns Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TTLSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=p1e2t.

IXBH42N170A Features

* z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z AC Motor Drives z Capacitor Discha

IXBH42N170A_IXYSCorporation.pdf