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IXBH12N300, IXBT12N300 - Bipolar MOS Transistor

IXBH12N300 Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.

IXBH12N300 Features

* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBH12N300 Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100120B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXBH12N300, IXBT12N300. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXBH12N300, IXBT12N300
Manufacturer
IXYS
File Size
774.59 KB
Datasheet
IXBT12N300-IXYS.pdf
Description
Bipolar MOS Transistor
Note
This datasheet PDF includes multiple part numbers: IXBH12N300, IXBT12N300.
Please refer to the document for exact specifications by model.

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Bipolar MOS Transistor IXYS
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