IXBH12N300, IXBT12N300 Datasheet - IXYS

IXBH12N300 - Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD M d Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 30 A 12 A 100 A VGE = 15V, TVJ = 125°C, RG = 30 ICM = 98 A Clampe

IXBH12N300 Features

* High Blocking Voltage

* International Standard Packages

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switched-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

IXBT12N300-IXYS.pdf