* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
IXBH12N300 Datasheet (774.59 KB)
IXBH12N300
IXYS
774.59 KB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBT12N300 IXBH12N300
VCES = IC110 = VCE(sat)
3000V 12A 3.
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