High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) 3000V 12A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD M d Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 30 A 12 A 100 A VGE = 15V, TVJ = 125°C, RG = 30 ICM = 98 A Clampe
Datasheet Details
Part number:
IXBH12N300, IXBT12N300
Manufacturer:
IXYS
File Size:
774.59 KB
Description:
Bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH12N300, IXBT12N300.
Please refer to the document for exact specifications by model.