IXBH12N300, IXBT12N300 Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.

📥 Download Datasheet

IXBH12N300 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBH12N300, IXBT12N300. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBH12N300, IXBT12N300
Manufacturer: IXYS
File Size: 774.59 KB
Datasheet: IXBT12N300-IXYS.pdf
Description: Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBH12N300, IXBT12N300.
Please refer to the document for exact specifications by model.

Features

* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100120B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C

IXBH12N300 Distributors

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IXBT12N300 Bipolar MOS Transistor IXYS

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