IXBH2N250 Datasheet - IXYS

IXBH2N250 Monolithic Bipolar MOS Transistor

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat)  2500V 2A 3.80V TO-268 (IXBT) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 2500 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 47 Clamped Inductive Load TC = 25°.

IXBH2N250 Features

* High Blocking Voltage

* Integrated Anti-parallel Diode

* International Standard Packages

* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat

IXBH2N250-IXYS.pdf