IXBH2N250

Monolithic Bipolar MOS Transistor

IXYS

IXBH2N250 Features

* High Blocking Voltage

* Integrated Anti-parallel Diode

* International Standard Packages

* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat

IXBH2N250 Datasheet (243.73 KB)

IXBH2N250 Datasheet Preview — Preview of IXBH2N250 PDF

Datasheet Details

Part number:

IXBH2N250

Manufacturer:

IXYS

File Size:

243.73 KB

Description:

Monolithic bipolar mos transistor.
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat) .

📁 Related Datasheet

IXBH20N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat)  3000V 20A 3.

IXBH20N360HV - Monolithic Bipolar MOS Transistor (IXYS)
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat.

IXBH22N300HV - Bipolar MOS Transistor (IXYS)
Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT22N300HV IXBH22N300HV VCES = IC110 = VCE(sat.

IXBH10N170 - Bipolar MOS Transistor (IXYS Corporation)
.. High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat.

IXBH12N300 - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.

IXBH14N300HV - Bipolar MOS Transistor (IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7.

IXBH15N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
.. High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE.

IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
.. High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE.

TAGS

IXBH2N250 Monolithic Bipolar MOS Transistor IXYS

Image Gallery

IXBH2N250 Features

Datasheet Details

File Size:

Description:

IXBH2N250 Distributor