IXBH2N250 Monolithic Bipolar MOS Transistor

IXYS

Description

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat) .

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Datasheet Specifications

Part number: IXBH2N250
Manufacturer: IXYS
File Size: 243.73 KB
Datasheet: IXBH2N250-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* High Blocking Voltage
* Integrated Anti-parallel Diode
* International Standard Packages
* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generator
* Capacitor Discharge Circuit
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved DS100160A(8/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)

IXBH2N250 Distributors

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IXBH2N250 Monolithic Bipolar MOS Transistor IXYS

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