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IXBH2N250 - Monolithic Bipolar MOS Transistor

IXBH2N250 Description

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat) .

IXBH2N250 Features

* High Blocking Voltage
* Integrated Anti-parallel Diode
* International Standard Packages
* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat

IXBH2N250 Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generator
* Capacitor Discharge Circuit
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved DS100160A(8/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)

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Datasheet Details

Part number
IXBH2N250
Manufacturer
IXYS
File Size
243.73 KB
Datasheet
IXBH2N250-IXYS.pdf
Description
Monolithic Bipolar MOS Transistor

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