Part number:
IXBH2N250
Manufacturer:
IXYS
File Size:
243.73 KB
Description:
Monolithic bipolar mos transistor.
Datasheet Details
Part number:
IXBH2N250
Manufacturer:
IXYS
File Size:
243.73 KB
Description:
Monolithic bipolar mos transistor.
IXBH2N250, Monolithic Bipolar MOS Transistor
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat) 2500V 2A 3.80V TO-268 (IXBT) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 2500 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 47 Clamped Inductive Load TC = 25°
IXBH2N250 Features
* High Blocking Voltage
* Integrated Anti-parallel Diode
* International Standard Packages
* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat
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