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IXBH10N170 Datasheet - IXYS Corporation

IXBH10N170 - Bipolar MOS Transistor

www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V

IXBH10N170 Features

* z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low c

IXBH10N170_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBH10N170

Manufacturer:

IXYS Corporation

File Size:

622.84 KB

Description:

Bipolar mos transistor.

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IXBH10N170 Bipolar MOS Transistor IXYS Corporation