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IXBH10N170 Datasheet - IXYS Corporation

IXBH10N170, Bipolar MOS Transistor

www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat.
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IXBH10N170_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBH10N170

Manufacturer:

IXYS Corporation

File Size:

622.84 KB

Description:

Bipolar MOS Transistor

Features

* z z Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb. in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low c

Applications

* z z z BVCES VGE(th) ICES IGES VCE(sat) IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperature Coefficent VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V z AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode p

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