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IXBH10N170

Bipolar MOS Transistor

IXBH10N170 Features

* z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low c

IXBH10N170 Datasheet (622.84 KB)

Preview of IXBH10N170 PDF

Datasheet Details

Part number:

IXBH10N170

Manufacturer:

IXYS Corporation

File Size:

622.84 KB

Description:

Bipolar mos transistor.
www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat.

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IXBH10N170 Bipolar MOS Transistor IXYS Corporation

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