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IXBH42N300HV, IXBT42N300HV - Monolithic Bipolar MOS Transistor

IXBH42N300HV Description

High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C .

IXBH42N300HV Features

* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage
* FBSOA
* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8
* VCES, VGE

IXBH42N300HV Applications

* Laser Generators
* Capacitor Discharge Circuits
* AC Switches
* Protection Circuits © 2023 Littelfuse, Inc. DS100512C(10/23) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. g I = 42A, V = 10V, Note 1 28 45 S fS C CE

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXBH42N300HV, IXBT42N300HV
Manufacturer
IXYS
File Size
1.89 MB
Datasheet
IXBT42N300HV-IXYS.pdf
Description
Monolithic Bipolar MOS Transistor
Note
This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV.
Please refer to the document for exact specifications by model.

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Monolithic Bipolar MOS Transistor IXYS
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