* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage
* FBSOA
* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8
* VCES, VGE
IXBH42N300HV Datasheet (1.89 MB)
IXBH42N300HV
IXYS
1.89 MB
Monolithic bipolar mos transistor.
High Voltage, BiMOSFETTM IXBT42N300HV
Monolithic Bipolar MOS Transistor
IXBH42N300HV
Symbol Test Conditions
Maximum Ratings
VCES VCGR
TC = 25°C .
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