IXBH42N300HV, IXBT42N300HV Datasheet - IXYS

IXBH42N300HV Monolithic Bipolar MOS Transistor

High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 104 A 42 A 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 84 A (RBSOA) Clamped Inductive Load 1500 V TSC (SCSOA) PC TJ TJM T stg T L TSOLD Md Weight VGE = 15V, TJ = 12.

IXBH42N300HV Features

* High Voltage Package

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage

* FBSOA

* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8

* VCES, VGE

IXBT42N300HV-IXYS.pdf

IXBH42N300HV Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXBH42N300HV, IXBT42N300HV

Manufacturer:

IXYS

File Size:

1.89 MB

Description:

Monolithic bipolar mos transistor.

Note:

This datasheet PDF includes multiple part numbers: IXBH42N300HV, IXBT42N300HV.
Please refer to the document for exact specifications by model.

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IXBH42N300HV IXBT42N300HV Monolithic Bipolar MOS Transistor IXYS

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