.
IXYS Corporation
IXBH15N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE.
IXYS
IXBF40N160 - High Voltage BIMOSFET
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf .
IXYS
IXBT16N170 - BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCG.
IXYS Corporation
L412 - High Voltage BIMOSFET
Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160.
IXYS Corporation
IXBF9N140 - High Voltage BIMOSFET
Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160.
IXYS Corporation
IXBF9N160 - High Voltage BIMOSFET
Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160.
IXYS Corporation
IXBH40N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode IXBH 40N140 IXBH 40N160 VCES IC25 VCE(sat.
IXYS Corporation
IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
www.DataSheet4U.com High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 15N140 IXBH 15N160 N-Channel, Enhancement Mode C G VCES IC25 VCE.
IXYS
IXBP5N160G - High Voltage BIMOSFET
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Prelimin.
IXYS
IXBH5N160G - High Voltage BIMOSFET
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Prelimin.
IXYS
IXBF9N160G - High Voltage BIMOSFET
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf .
IXYS
IXBH6N170 - BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR V.
IXYS
IXBT6N170 - BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR V.
IXYS
IXBH16N170 - BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCG.