IXBT6N170, IXBH6N170 BIMOSFET Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR V.

📥 Download Datasheet

IXBT6N170 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBT6N170, IXBH6N170. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBT6N170, IXBH6N170
Manufacturer: IXYS
File Size: 174.36 KB
Datasheet: IXBH6N170-IXYS.pdf
Description: BIMOSFET Monolithic Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBT6N170, IXBH6N170.
Please refer to the document for exact specifications by model.

Applications

* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS99004C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 6A, VCE = 1

IXBT6N170 Distributors

📁 Related Datasheet

IXBT10N170 IXBT16N170A IXBT42N170 IXBT42N170A IXBD4410 IXBD4411

📌 All Tags

IXBH6N170 BIMOSFET Monolithic Bipolar MOS Transistor IXYS

IXYS IXBT6N170-like datasheet