IXBT6N170, IXBH6N170 Datasheet - IXYS

IXBT6N170, IXBH6N170, BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH6N170 IXBT6N170 VCES = IC90 = VCE(sat) ≤ 1700V 6A 3.4V Symbol VCES VCGR V.

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IXBH6N170-IXYS.pdf

IXBT6N170 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBT6N170, IXBH6N170. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXBT6N170, IXBH6N170

Manufacturer:

IXYS

File Size:

174.36 KB

Description:

BIMOSFET Monolithic Bipolar MOS Transistor

Note:

This datasheet PDF includes multiple part numbers: IXBT6N170, IXBH6N170.
Please refer to the document for exact specifications by model.

Applications

* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS99004C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 6A, VCE = 1

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IXBH6N170 BIMOSFET Monolithic Bipolar MOS Transistor IXYS

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