IXBT12N300 Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.

📥 Download Datasheet

IXBT12N300 Datasheet Preview — Preview of IXBT12N300 PDF

Datasheet Specifications

Part number: IXBT12N300
Manufacturer: IXYS
File Size: 774.59 KB
Datasheet: IXBT12N300-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100120B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C

IXBT12N300 Distributors

📁 Related Datasheet

IXBT10N170 IXBT16N170A IXBT42N170 IXBT42N170A IXBD4410 IXBD4411

📌 All Tags

IXBT12N300 Bipolar MOS Transistor IXYS

IXYS IXBT12N300-like datasheet