IXBT12N300 - Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) 3000V 12A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD M d Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 30 A 12 A 100 A VGE = 15V, TVJ = 125°C, RG = 30 ICM = 98 A Clampe
IXBT12N300 Features
* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
