* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
IXBT12N300 Datasheet (774.59 KB)
IXBT12N300
IXYS
774.59 KB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) 3000V 12A 3.
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