IXBT12N300 Datasheet - IXYS

IXBT12N300, Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat)  3000V 12A 3.

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IXBT12N300-IXYS.pdf

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Datasheet Details

Part number:

IXBT12N300

Manufacturer:

IXYS

File Size:

774.59 KB

Description:

Bipolar MOS Transistor

Features

* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100120B(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) C

IXBT12N300 Distributors

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IXBT12N300 Bipolar MOS Transistor IXYS

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