IXBT12N300HV, IXYS
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBA12N300HV IXBT12N300HV
VCES = IC110 = VCE(sat)
3000V 1.
IXBT10N170, IXYS Corporation
..
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 10N170 IXBT 10N170
VCES = 1700 V IC25 = 20 A VCE(sat.
IXBT16N170, IXYS
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH16N170 IXBT16N170
VCES = IC90 = VCE(sat) ≤
1700V 16A 3.3V
Symbol
VCES VCG.
IXBT16N170A, IXYS Corporation
Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT 16N170A
VCES IC25 VCE(sat) t.
IXBT16N170AHV, IXYS
Advance Technical Information
High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV
Bipolar MOS Transistor
VCES = IC25 = VCE(sat.
IXBT20N300, IXYS
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBH20N300 IXBT20N300
VCES = IC110 = VCE(sat)
3000V 20A 3.
IXBT20N300HV, IXYS
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBT20N300HV
VCES = IC110 = VCE(sat)
3000V 20A 3.2V
Symb.