IXBT14N300HV Datasheet - IXYS

IXBT14N300HV Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBT14N300HV IXBH14N300HV VCES = IC110 = VCE(sat)  3000V 14A 2.7V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL T SOLD FC Md Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 38 A 14 A 120 A VGE = 15V, TVJ = 125°C, RG = 20 ICM =.

IXBT14N300HV Features

* High Voltage Packages

* High Blocking Voltage

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Ge

IXBT14N300HV Datasheet (3.45 MB)

IXBT14N300HV Datasheet Preview — Preview of IXBT14N300HV PDF

Datasheet Details

Part number:

IXBT14N300HV

Manufacturer:

IXYS

File Size:

3.45 MB

Description:

Bipolar mos transistor.

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IXBT14N300HV Bipolar MOS Transistor IXYS

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