* Monolithic fast reverse diode
* High Blocking Voltage
* JEDEC TO-268 surface mount and JEDEC TO-247 AD packages
* Low switching losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Molding epoxies meet UL 94 V-0 f
IXBT16N170A Datasheet (51.85 KB)
IXBT16N170A
IXYS Corporation
51.85 KB
Bipolar mos transistor.
Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) t.
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