IXBT20N360HV Monolithic Bipolar MOS Transistor

IXYS

Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT20N360HV IXBH20N360HV VCES = IC110 = VCE(sat.

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Datasheet Specifications

Part number: IXBT20N360HV
Manufacturer: IXYS
File Size: 287.68 KB
Datasheet: IXBT20N360HV-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* High Voltage Packages
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100643(12/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

IXBT20N360HV Distributors

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IXBT20N360HV Monolithic Bipolar MOS Transistor IXYS

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