* High Blocking Voltage
* Integrated Anti-parallel Diode
* International Standard Packages
* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat
IXBT2N250 Datasheet (243.73 KB)
IXBT2N250
IXYS
243.73 KB
Monolithic bipolar mos transistor.
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat) .
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