Datasheet Details
Part number:
IXBT2N250, IXBH2N250
Manufacturer:
IXYS
File Size:
243.73 KB
Description:
Monolithic bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBT2N250, IXBH2N250.
Please refer to the document for exact specifications by model.
IXBT2N250, IXBH2N250, Monolithic Bipolar MOS Transistor
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH2N250 IXBT2N250 VCES = IC110 = VCE(sat) 2500V 2A 3.80V TO-268 (IXBT) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 2500 ± 20 ± 30 TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 47 Clamped Inductive Load TC = 25°
IXBT2N250 Features
* High Blocking Voltage
* Integrated Anti-parallel Diode
* International Standard Packages
* Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat
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