IXBT20N300HV Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT20N300HV VCES = IC110 = VCE(sat)  3000V 20A 3.2V Symb.

📥 Download Datasheet

IXBT20N300HV Datasheet Preview — Preview of IXBT20N300HV PDF

Datasheet Specifications

Part number: IXBT20N300HV
Manufacturer: IXYS
File Size: 880.20 KB
Datasheet: IXBT20N300HV-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V I GES VCE(sat) V = 0V

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100513A(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

IXBT20N300HV Distributors

📁 Related Datasheet

IXBT10N170 IXBT16N170A IXBT42N170 IXBT42N170A IXBD4410 IXBD4411

📌 All Tags

IXBT20N300HV Bipolar MOS Transistor IXYS

IXYS IXBT20N300HV-like datasheet