Part number:
IXBT20N300HV
Manufacturer:
IXYS
File Size:
880.20 KB
Description:
Bipolar mos transistor.
Datasheet Details
Part number:
IXBT20N300HV
Manufacturer:
IXYS
File Size:
880.20 KB
Description:
Bipolar mos transistor.
IXBT20N300HV, Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT20N300HV VCES = IC110 = VCE(sat) 3000V 20A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T SOLD Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 50 A
IXBT20N300HV Features
* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V I GES VCE(sat) V = 0V
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