* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V I GES VCE(sat) V = 0V
IXBT20N300HV Datasheet (880.20 KB)
IXBT20N300HV
IXYS
880.20 KB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT20N300HV VCES = IC110 = VCE(sat) 3000V 20A 3.2V Symb.
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