IXBT20N300HV Datasheet - IXYS

IXBT20N300HV Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT20N300HV VCES = IC110 = VCE(sat)  3000V 20A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T SOLD Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum Ratings 3000 V 3000 V ± 20 V ± 30 V 50 A.

IXBT20N300HV Features

* High Voltage Package

* High Blocking Voltage

* Anti-Parallel Diode

* Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8

* VCES, VGE = 0V I GES VCE(sat) V = 0V

IXBT20N300HV-IXYS.pdf