IXBT20N300HV Datasheet - IXYS

IXBT20N300HV, Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT20N300HV VCES = IC110 = VCE(sat)  3000V 20A 3.2V Symb.

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IXBT20N300HV-IXYS.pdf

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Datasheet Details

Part number:

IXBT20N300HV

Manufacturer:

IXYS

File Size:

880.20 KB

Description:

Bipolar MOS Transistor

Features

* High Voltage Package
* High Blocking Voltage
* Anti-Parallel Diode
* Low Conduction Losses Symbol Test Conditions (T = 25°C Unless Otherwise Specified) J BVCES IC = 250µA, VGE = 0V VGE(th) IC = 250µA, VCE = VGE ICES VCE = 0.8
* VCES, VGE = 0V I GES VCE(sat) V = 0V

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100513A(6/21) Not for New Design Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

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IXBT20N300HV Bipolar MOS Transistor IXYS

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