IXBT42N170A, IXBH42N170A Monolithic Bipolar MOS Transistor

IXYS Corporation

Description

Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N170A IXBH42N170A VCES = IC90 = VCE(.

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IXBT42N170A Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBT42N170A, IXBH42N170A. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBT42N170A, IXBH42N170A
Manufacturer: IXYS Corporation
File Size: 238.23 KB
Datasheet: IXBH42N170A_IXYSCorporation.pdf
Description: Monolithic Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBT42N170A, IXBH42N170A.
Please refer to the document for exact specifications by model.

Applications

* z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power Supplies (UPS) z AC Motor Drives z Capacitor Discharge Circuits z AC Switches © 2012 IXYS CORPORATION, All Rights Reserved DS98939A(11/12) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = IC90, VCE = 10

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IXBH42N170A Monolithic Bipolar MOS Transistor IXYS Corporation

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