IXBT16N170AHV Datasheet - IXYS

IXBT16N170AHV Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV Bipolar MOS Transistor VCES = IC25 = VCE(sat)  1700V 16A 6.0V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ± 20 V ± 30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 16 A 10 A 40 A VGE = 15V, TVJ = 125°C, RG = 3.

IXBT16N170AHV Features

* High Voltage Package

* High Blocking Voltage

* Anti-Parallel Diode

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications:

* Switch-Mode and Resonant-Mode Power Supplies

* Uninterruptible Power Supplies (UPS)

* Laser Ge

IXBT16N170AHV Datasheet (176.63 KB)

IXBT16N170AHV Datasheet Preview — Preview of IXBT16N170AHV PDF

Datasheet Details

Part number:

IXBT16N170AHV

Manufacturer:

IXYS

File Size:

176.63 KB

Description:

Bipolar mos transistor.

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IXBT16N170AHV Bipolar MOS Transistor IXYS

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