IXBF9N140
IXYS Corporation
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High voltage bimosfet.
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IXBF9N140 - Power MOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160.
IXBF9N160 - High Voltage BIMOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160.
IXBF9N160 - Power MOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160.
IXBF9N160G - High Voltage BIMOSFET
(IXYS)
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N160 G
IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf .
IXBF12N300 - Monolithic Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2.
IXBF14N300 - Bipolar MOS Transistor
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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF14N300
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Maximum Ratings.
IXBF20N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBF20N300
(Electrically Isolated Tab)
Symbol Test Conditio.
IXBF20N360 - Bipolar MOS Transistor
(IXYS)
Preliminary Technical Information
High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBF20N360
VCES = IC110 = VCE(sat)
.
IXBF22N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF22N300
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Maximum Ratings.
IXBF28N300 - Bipolar MOS Transistor
(IXYS)
Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF28N300
VCES = IC90 = VCE(sat)
3000V 28A 2.
