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IXBF20N360 - Bipolar MOS Transistor

IXBF20N360 Description

Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = IC110 = VCE(sat)  .

IXBF20N360 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Frequency Operation Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwi

IXBF20N360 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2013 IXYS CORPORATION, All Rights Reserved DS100567A(12/13) IXBF20N360 Symbol Test Conditions (TJ = 25°C Unless Otherwise S

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Datasheet Details

Part number
IXBF20N360
Manufacturer
IXYS
File Size
235.10 KB
Datasheet
IXBF20N360-IXYS.pdf
Description
Bipolar MOS Transistor

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