IXBF20N360 Datasheet - IXYS

IXBF20N360 Bipolar MOS Transistor

Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = IC110 = VCE(sat)  3600V 18A 3.4V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3600 V 3600 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 45 A 18 A 220 A SSOA VGE = 15V, TVJ = 125°C, RG = 10 ICM = 160 A (.

IXBF20N360 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Frequency Operation Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwi

IXBF20N360-IXYS.pdf

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Datasheet Details

Part number:

IXBF20N360

Manufacturer:

IXYS

File Size:

235.10 KB

Description:

Bipolar mos transistor.

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IXBF20N360 IXBF20N360 Bipolar MOS Transistor IXYS

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