IXBF20N360
IXYS
235.10kb
Bipolar mos transistor.
TAGS
📁 Related Datasheet
IXBF20N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBF20N300
(Electrically Isolated Tab)
Symbol Test Conditio.
IXBF22N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF22N300
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings.
IXBF28N300 - Bipolar MOS Transistor
(IXYS)
Advance Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF28N300
VCES = IC90 = VCE(sat)
3000V 28A 2.
IXBF12N300 - Monolithic Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES = IC110 = VCE(sat) ≤
3000V 11A 3.2.
IXBF14N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBF14N300
(Electrically Isolated Tab)
Symbol Test Conditions
Maximum Ratings.
IXBF32N300 - Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF32N300
Symbol Test Conditions
Maximum Ratings
.
IXBF40N160 - High Voltage BIMOSFET
(IXYS)
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf .
IXBF55N300 - Monolithic Bipolar MOS Transistor
(IXYS)
High Voltage, High Gain BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBF55N300
VCES = IC110 = VCE(sat)
3000V 34A 3.2V
(Electrically Isolated Ta.
IXBF9N140 - High Voltage BIMOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160.
IXBF9N140 - Power MOSFET
(IXYS Corporation)
Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160.
Stock and price
