IXBF20N360 Datasheet - IXYS

IXBF20N360 Bipolar MOS Transistor

Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = IC110 = VCE(sat)  3600V 18A 3.4V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3600 V 3600 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 45 A 18 A 220 A SSOA VGE = 15V, TVJ = 125°C, RG = 10 ICM = 160 A (.

IXBF20N360 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Frequency Operation Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwi

IXBF20N360 Datasheet (235.10 KB)

IXBF20N360 Datasheet Preview — Preview of IXBF20N360 PDF

Datasheet Details

Part number:

IXBF20N360

Manufacturer:

IXYS

File Size:

235.10 KB

Description:

Bipolar mos transistor.

📁 Related Datasheet

IXBF20N300 Bipolar MOS Transistor (IXYS)

IXBF22N300 Bipolar MOS Transistor (IXYS)

IXBF28N300 Bipolar MOS Transistor (IXYS)

IXBF12N300 Monolithic Bipolar MOS Transistor (IXYS)

IXBF14N300 Bipolar MOS Transistor (IXYS)

IXBF32N300 Bipolar MOS Transistor (IXYS)

IXBF40N160 High Voltage BIMOSFET (IXYS)

IXBF55N300 Monolithic Bipolar MOS Transistor (IXYS)

TAGS

IXBF20N360 Bipolar MOS Transistor IXYS

IXBF20N360 Distributor