* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Frequency Operation Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwi
IXBF20N360 Datasheet (235.10 KB)
IXBF20N360
IXYS
235.10 KB
Bipolar mos transistor.
Preliminary Technical Information
High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBF20N360
VCES = IC110 = VCE(sat)
.
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