High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES V CGR TJ = 25°C to 150°C T = 25°C to 150°C, R = 1M J GE 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1ms 28 A 14 A 98 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A (RBSOA) Clamped Inductive Load V 1500 V CE TSC V = 15V, T = 125°C, GE J
Datasheet Details
Part number:
IXBF14N300
Manufacturer:
IXYS
File Size:
1.56 MB
Description:
Bipolar mos transistor.