IXBF14N300 Datasheet - IXYS

IXBF14N300 - Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES V CGR TJ = 25°C to 150°C T = 25°C to 150°C, R = 1M J GE 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC90 TC = 90°C ICM TC = 25°C, 1ms 28 A 14 A 98 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 120 A (RBSOA) Clamped Inductive Load V  1500 V CE TSC V = 15V, T = 125°C, GE J

IXBF14N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications

IXBF14N300-IXYS.pdf