* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
IXBF14N300 Datasheet (1.56 MB)
IXBF14N300
IXYS
1.56 MB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings.
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