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IXBF28N300 - Bipolar MOS Transistor

IXBF28N300 Description

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat)  3000V 28A 2.

IXBF28N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

IXBF28N300 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100601(03/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

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Datasheet Details

Part number
IXBF28N300
Manufacturer
IXYS
File Size
202.43 KB
Datasheet
IXBF28N300-IXYS.pdf
Description
Bipolar MOS Transistor

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Bipolar MOS Transistor IXYS
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