IXBF28N300 Datasheet - IXYS

IXBF28N300, Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat)  3000V 28A 2.

datasheet Preview Page 1 from Datasheet4u.com

IXBF28N300-IXYS.pdf

IXBF28N300 Datasheet Preview — Preview of IXBF28N300 PDF

Datasheet Details

Part number:

IXBF28N300

Manufacturer:

IXYS

File Size:

202.43 KB

Description:

Bipolar MOS Transistor

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2014 IXYS CORPORATION, All Rights Reserved DS100601(03/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Cha

IXBF28N300 Distributors

📁 Related Datasheet

IXBF9N140 IXBF9N160 IXBD4410 IXBD4411 IXBH10N170 IXBH15N140

📌 All Tags

IXBF28N300 Bipolar MOS Transistor IXYS

IXYS IXBF28N300-like datasheet