Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = IC90 = VCE(sat) 3000V 28A 2.7V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg TL TSOLD FC VISOL Weight TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 3000 ± 20 ± 30 TC = 25°C TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 15 Clamped Inducti
Datasheet Details
Part number:
IXBF28N300
Manufacturer:
IXYS
File Size:
202.43 KB
Description:
Bipolar mos transistor.