* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 3000V Electrical Isolation
* High Blocking Voltage
* International Standard Package
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
IXBF32N300 Datasheet (3.05 MB)
IXBF32N300
IXYS
3.05 MB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings .
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