IXBF32N300 Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings .

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Datasheet Specifications

Part number: IXBF32N300
Manufacturer: IXYS
File Size: 3.05 MB
Datasheet: IXBF32N300-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 3000V Electrical Isolation
* High Blocking Voltage
* International Standard Package
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100119A(6/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values

IXBF32N300 Distributors

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IXBF32N300 Bipolar MOS Transistor IXYS

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