High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 250 A SSOA VGE = 15V, TVJ = 125°C, RG = 10 ICM = 80 A (RBSOA) Clamped Inductive Load V 2400 V CES PC TC = 25°C 160 W T -55 +150 °C
Datasheet Details
Part number:
IXBF32N300
Manufacturer:
IXYS
File Size:
3.05 MB
Description:
Bipolar mos transistor.