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IXBF32N300 Bipolar MOS Transistor

IXBF32N300 Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings .

IXBF32N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 3000V Electrical Isolation
* High Blocking Voltage
* International Standard Package
* Low Conduction Losses Advantages
* Low Gate Drive Requirement

IXBF32N300 Applications

* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2021 Littelfuse, Inc. DS100119A(6/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values

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Datasheet Details

Part number
IXBF32N300
Manufacturer
IXYS
File Size
3.05 MB
Datasheet
IXBF32N300-IXYS.pdf
Description
Bipolar MOS Transistor

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Bipolar MOS Transistor IXYS
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