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IXBF9N160G

High Voltage BIMOSFET

IXBF9N160G Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability

* ISOPLUS i4-PACTM high voltage package - isolated

IXBF9N160G Datasheet (77.57 KB)

Preview of IXBF9N160G PDF

Datasheet Details

Part number:

IXBF9N160G

Manufacturer:

IXYS

File Size:

77.57 KB

Description:

High voltage bimosfet.
High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf .

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IXBF9N160G High Voltage BIMOSFET IXYS

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