IXBF9N160G High Voltage BIMOSFET

IXYS

Description

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf .

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Datasheet Specifications

Part number: IXBF9N160G
Manufacturer: IXYS
File Size: 77.57 KB
Datasheet: IXBF9N160G-IXYS.pdf
Description: High Voltage BIMOSFET

Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
* ISOPLUS i4-PACTM high voltage package - isolated

Applications

* switched mode power supplies
* DC-DC converters
* resonant converters
* lamp ballasts
* laser generators, x ray generators 0648 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1-4 Component Symbo

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IXBF9N160G High Voltage BIMOSFET IXYS

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