IXBF9N160G Datasheet - IXYS

IXBF9N160G, High Voltage BIMOSFET

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf .

datasheet Preview Page 1 from Datasheet4u.com

IXBF9N160G-IXYS.pdf

IXBF9N160G Datasheet Preview — Preview of IXBF9N160G PDF

Datasheet Details

Part number:

IXBF9N160G

Manufacturer:

IXYS

File Size:

77.57 KB

Description:

High Voltage BIMOSFET

Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
* ISOPLUS i4-PACTM high voltage package - isolated

Applications

* switched mode power supplies
* DC-DC converters
* resonant converters
* lamp ballasts
* laser generators, x ray generators 0648 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1-4 Component Symbo

IXBF9N160G Distributors

📁 Related Datasheet

IXBF9N160 IXBF9N140 IXBD4410 IXBD4411 IXBH10N170 IXBH15N140

📌 All Tags

IXBF9N160G High Voltage BIMOSFET IXYS

IXYS IXBF9N160G-like datasheet