Datasheet4U Logo Datasheet4U.com

IXBF9N160G - High Voltage BIMOSFET

IXBF9N160G Description

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf .

IXBF9N160G Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
* ISOPLUS i4-PACTM high voltage package - isolated

IXBF9N160G Applications

* switched mode power supplies
* DC-DC converters
* resonant converters
* lamp ballasts
* laser generators, x ray generators 0648 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1-4 Component Symbo

📥 Download Datasheet

Preview of IXBF9N160G PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
IXBF9N160G
Manufacturer
IXYS
File Size
77.57 KB
Datasheet
IXBF9N160G-IXYS.pdf
Description
High Voltage BIMOSFET

📁 Related Datasheet

  • IXBF9N160 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBF9N140 - High Voltage BIMOSFET (IXYS Corporation)
  • IXBD4410 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBD4411 - Half Bridge Driver Chipset (IXYS Corporation)
  • IXBH10N170 - Bipolar MOS Transistor (IXYS Corporation)
  • IXBH15N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
  • IXBH16N170A - Bipolar MOS Transistor (IXYS Corporation)

📌 All Tags

High Voltage BIMOSFET IXYS
IXYS IXBF9N160G-like datasheet

IXBF9N160G Stock/Price