IXBF9N160G Datasheet - IXYS

IXBF9N160G High Voltage BIMOSFET

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Cies Q Gon V F RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 27 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 7A 4A 12 0.8 VCES .

IXBF9N160G Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability

* ISOPLUS i4-PACTM high voltage package - isolated

IXBF9N160G-IXYS.pdf