High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N160 G IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Cies Q Gon V F RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 27 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 V ± 20 V 7A 4A 12 0.8 VCES
Datasheet Details
Part number:
IXBF9N160G
Manufacturer:
IXYS
File Size:
77.57 KB
Description:
High voltage bimosfet.