Datasheet Details
Part number:
IXBT20N300, IXBH20N300
Manufacturer:
IXYS
File Size:
771.98 KB
Description:
Bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBT20N300, IXBH20N300.
Please refer to the document for exact specifications by model.
IXBT20N300, IXBH20N300, Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBH20N300 IXBT20N300 VCES = IC110 = VCE(sat) 3000V 20A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg T L T SOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10 secon
IXBT20N300 Features
* High Blocking Voltage
* Anti-Parallel Diode
* International Standard Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
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