* High Blocking Voltage
* Anti-Parallel Diode
* International Standard Packages
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
IXBT20N300 Datasheet (771.98 KB)
IXBT20N300
IXYS
771.98 KB
Bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Not for New Design
IXBH20N300 IXBT20N300
VCES = IC110 = VCE(sat)
3000V 20A 3.
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