IXBT42N170, IXBH42N170 Monolithic Bipolar MOS Transistor

IXYS Corporation

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = IC90 = VCE(sat) ≤ 1700V 42A 2.8V Symbol VCES VCG.

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IXBT42N170 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBT42N170, IXBH42N170. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBT42N170, IXBH42N170
Manufacturer: IXYS Corporation
File Size: 177.41 KB
Datasheet: IXBH42N170_IXYSCorporation.pdf
Description: Monolithic Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBT42N170, IXBH42N170.
Please refer to the document for exact specifications by model.

Applications

* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98710C(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 42A, VCE =

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IXBH42N170 Monolithic Bipolar MOS Transistor IXYS Corporation

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