IXBT42N300HV Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C .

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Datasheet Specifications

Part number: IXBT42N300HV
Manufacturer: IXYS
File Size: 1.89 MB
Datasheet: IXBT42N300HV-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage
* FBSOA
* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8
* VCES, VGE

Applications

* Laser Generators
* Capacitor Discharge Circuits
* AC Switches
* Protection Circuits © 2023 Littelfuse, Inc. DS100512C(10/23) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. g I = 42A, V = 10V, Note 1 28 45 S fS C CE

IXBT42N300HV Distributors

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IXBT42N300HV Monolithic Bipolar MOS Transistor IXYS

IXYS IXBT42N300HV-like datasheet