IXBT42N300HV Datasheet (IXYS) - Monolithic Bipolar MOS Transistor

IXBT42N300HV, Monolithic Bipolar MOS Transistor

High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 104 A 42 A 400 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 84 A (RBSOA) Clamped Inductive Load 1500 V TSC (SCSOA) PC TJ TJM T stg T L TSOLD Md Weight VGE = 15V, TJ = 12

IXBT42N300HV Features

* High Voltage Package

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage

* FBSOA

* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8

* VCES, VGE