IXBT16N170, IXBH16N170 BIMOSFET Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = IC90 = VCE(sat) ≤ 1700V 16A 3.3V Symbol VCES VCG.

📥 Download Datasheet

IXBT16N170 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBT16N170, IXBH16N170. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXBT16N170, IXBH16N170
Manufacturer: IXYS
File Size: 170.68 KB
Datasheet: IXBH16N170-IXYS.pdf
Description: BIMOSFET Monolithic Bipolar MOS Transistor
Note: This datasheet PDF includes multiple part numbers: IXBT16N170, IXBH16N170.
Please refer to the document for exact specifications by model.

Applications

* z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC switches © 2008 IXYS CORPORATION, All rights reserved DS98657B(10/08) Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfS IC = 16A, VCE =

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IXBH16N170 BIMOSFET Monolithic Bipolar MOS Transistor IXYS

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