* z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Laser generator z Capacitor discharge circuit z AC sw
IXBT16N170 Datasheet (170.68 KB)
IXBT16N170
IXYS
170.68 KB
Bimosfet monolithic bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH16N170 IXBT16N170
VCES = IC90 = VCE(sat) ≤
1700V 16A 3.3V
Symbol
VCES VCG.
📁 Related Datasheet
IXBT16N170A Bipolar MOS Transistor (IXYS Corporation)
IXBT16N170AHV Bipolar MOS Transistor (IXYS)
IXBT10N170 Bipolar MOS Transistor (IXYS Corporation)
IXBT12N300 Bipolar MOS Transistor (IXYS)
IXBT12N300HV Bipolar MOS Transistor (IXYS)
IXBT14N300HV Bipolar MOS Transistor (IXYS)
IXBT20N300 Bipolar MOS Transistor (IXYS)
IXBT20N300HV Bipolar MOS Transistor (IXYS)
IXBT20N360HV Monolithic Bipolar MOS Transistor (IXYS)
IXBT22N300HV Bipolar MOS Transistor (IXYS)
