IXBF40N160 Datasheet - IXYS

IXBF40N160 High Voltage BIMOSFET

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf = 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol V CE(sat) VGE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings 1600 ± 20 V V 28 A 16 A 40 0.8VCES 250 A W Conditi.

IXBF40N160 Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability

* ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - e

IXBF40N160-IXYS.pdf