IXBF40N160 High Voltage BIMOSFET

IXYS

Description

High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 40N160 IC25 = 28 A VCES = 1600 V VCE(sat) = 6.2 V tf .

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Datasheet Specifications

Part number: IXBF40N160
Manufacturer: IXYS
File Size: 81.62 KB
Datasheet: IXBF40N160-IXYS.pdf
Description: High Voltage BIMOSFET

Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability
* ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - e

Applications

* switched mode power supplies
* DC-DC converters
* resonant converters
* lamp ballasts
* laser generators, x ray generators 0648 IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved 1-4 Component Symbo

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IXBF40N160 High Voltage BIMOSFET IXYS

IXYS IXBF40N160-like datasheet