IXBP5N160G Datasheet - IXYS

IXBP5N160G High Voltage BIMOSFET

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Preliminary data sheet C TO-220 AB (IXBP) G C E C (TAB) G TO-247 AD (IXBH) E G C C (TAB) E A = Anode, C = Cathode , TAB = Cathode IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 47 Ω; TVJ = 1.

IXBP5N160G Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability

* industry standard package - TO-220AB - TO-247AD

IXBP5N160G-IXYS.pdf