* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
* industry standard package - TO-220AB - TO-247AD
IXBP5N160G Datasheet (24.62 KB)
IXBP5N160G
IXYS
24.62 KB
High voltage bimosfet.
High Voltage BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G IXBH 5N160 G
IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns
Prelimin.
📁 Related Datasheet
IXBA12N300HV Bipolar MOS Transistor (IXYS)
IXBA14N300HV Bipolar MOS Transistor (IXYS)
IXBA16N170AHV Bipolar MOS Transistor (IXYS)
IXBD4410 Half Bridge Driver Chipset (IXYS Corporation)
IXBD4411 Half Bridge Driver Chipset (IXYS Corporation)
IXBF12N300 Monolithic Bipolar MOS Transistor (IXYS)
IXBF14N300 Bipolar MOS Transistor (IXYS)
IXBF20N300 Bipolar MOS Transistor (IXYS)
IXBF20N360 Bipolar MOS Transistor (IXYS)
IXBF22N300 Bipolar MOS Transistor (IXYS)
