IXBP5N160G High Voltage BIMOSFET

IXYS

Description

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Prelimin.

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Datasheet Specifications

Part number: IXBP5N160G
Manufacturer: IXYS
File Size: 24.62 KB
Datasheet: IXBP5N160G-IXYS.pdf
Description: High Voltage BIMOSFET

Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability
* industry standard package - TO-220AB - TO-247AD

Applications

* switched mode power supplies
* DC-DC converters
* resonant converters
* lamp ballasts
* laser generators, x ray generators 321 IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH

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IXBP5N160G High Voltage BIMOSFET IXYS

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